JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-2.5A; I
B
=-5mA
I
C
=-5A; I
B
=-20mA
I
C
=-2.5A; I
B
=-5mA
V
CB
=-100V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-2.5A ; V
CE
=-3V
I
C
=-7A ; V
CE
=-3V
1500
500
MIN
-100
2SB1381
TYP.
MAX
UNIT
V
-1.5
-3.0
-2.5
-100
-2.5
15000
V
V
V
μA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-5mA
V
CC
=-25V ,R
L
=10Ω
0.8
2.5
2.0
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
