JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-2A ;I
B
=-0.2A
I
C
=-0.5A;V
CE
=-5V
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-2A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0; f=1MHz;V
CB
=-10V
100
15
9
MIN
-60
2SB1375
TYP.
MAX
UNIT
V
-1.0
-0.75
-1.5
-1.0
-10
-10
320
V
V
μA
μA
MHz
pF
50
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
