JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-3A ;I
B
=-0.3A
I
C
=-3A ; V
CE
=-5V
V
CB
=-100V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-5V
20
60
20
130
20
MIN
TYP.
2SB1157
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
μA
μA
200
pF
MHz
h
FE-2
classifications
Q
60-120
S
80-160
P
100-200
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
