JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-7A ;I
B
=-0.35A
I
C
=-15A ;I
B
=-1.5A
I
C
=-7A ;I
B
=-0.35A
I
C
=-15A ;I
B
=-1.5A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-8A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-10V;f=10MHz
45
90
30
25
MIN
-80
2SB1155
TYP.
MAX
UNIT
V
-0.5
-1.5
-1.5
-2.5
-10
-50
V
V
V
V
μA
μA
260
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-7A ;I
B1
=-I
B2
=-0.7A
V
CC
=-50V
0.5
1.3
0.2
μs
μs
μs
h
FE-2
classifications
Q
90-180
P
130-260
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
