JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CES
I
CEO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-30mA; I
B
=0
I
C
=-2A ;I
B
=-0.2A
I
C
=-1A ; V
CE
=-4V
V
CE
=-60V; V
BE
=0
V
CE
=-30V; I
B
=0
V
EB
=-6V; I
C
=0
I
C
=-0.1A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
35
40
MIN
-60
2SB1052
TYP.
MAX
UNIT
V
-2.0
-1.2
-0.2
-0.3
-1.0
V
V
mA
mA
mA
250
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-1A ;I
B1
=-I
B2
=-0.1A
0.1
1.5
0.3
μs
μs
μs
h
FE-2
Classifications
R
40-90
Q
70-150
P
120-250
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
