JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-2mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
C
=-3.0A; I
B
=-0.3A*
2
I
C
=-2.0A ;I
B
=-0.2A*
2
V
CB
=-50V; I
E
=0
V
CE
=-10V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V*
2
I
C
=-0.5A ; V
CE
=-5V*
2
I
E
=0; f=1MHz ; V
CB
=-20V
50
MIN
-40
-50
2SB1075
TYP.
MAX
UNIT
V
V
-1.0
-1.5
-1
-100
-10
220
150
40
V
V
μA
μA
μA
MHz
pF
Note:
*
2
pulse test
h
FE
Classifications
P
50-100
Q
80-160
R
120-220
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
