JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1064
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA ,I
B
=0
-50
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-50μA ,I
E
=0
-60
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50μA ,I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-40V; I
E
=0
-1.0
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1.0
μA
h
FE
DC current gain
I
C
=-0.5A ; V
CE
=-3V
60
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V,f=1MHz
50
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
70
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
