JMnic
Product Specification
Silicon PNP Power Transistors
2SB1034
DESCRIPTION
・With
TO-126 package
・Low
collector saturation voltage
・High
DC current gain
・DARLINGTON
APPLICATIONS
・For
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-8
-2
-0.5
15
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃