JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1017
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-80
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
I
C
=-3A ;V
CE
=-5V
-1.0
-1.7
V
Base-emitter on voltage
-1.0
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-80V; I
E
=0
-30
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-100
h
FE-1
DC current gain
I
C
=-0.5A ; V
CE
=-5V
40
240
h
FE-2
DC current gain
I
C
=-3A ; V
CE
=-5V
15
f
T
C
OB
Transition frequency
I
C
=-0.5A; V
CE
=-5V
I
E
=0, f=1MHz ; V
CB
=-10V
9
MHz
Collector output capacitance
130
pF
h
FE-1
Classifications
R
40-80
O
70-140
Y
120-240
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
