JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
V
F
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=-30mA, I
B
=0
I
C
=-1mA, I
E
=0
I
C
=-1.5A ,I
B
=-30mA
I
C
=-4A ,I
B
=-40mA
V
CB
=-50V, I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1.5A ; V
CE
=-3V
I
C
=-4A ; V
CE
=-3V
I
F
=-4A
750
100
MIN
-50
-50
2SB1005
TYP.
MAX
UNIT
V
V
-2.5
-4.0
-0.1
-2.0
V
V
mA
mA
3.5
V
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
