JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA985 2SA985A
MIN
TYP.
MAX
UNIT
2SA985
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA985A
I
C
=-25mA ,I
B
=0
-120
V
-150
V
CEsat
Collector-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-0.3
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-0.9
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-1.0
μA
h
FE-1
DC current gain
I
C
=-5mA ; V
CE
=-5V
35
h
FE-2
DC current gain
I
C
=-0.3A ; V
CE
=-5V
60
150
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V,f=1MHz
29
pF
f
T
Transition frequency
I
C
=-0.2A ; V
CE
=-5V
180
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
