Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA914
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-0.1mA;I
B
=0
-150
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=-10μA ;I
C
=0
I
C
=-30mA ;I
B
=-3mA
-5
V
Collector-emitter saturation voltage
-1.0
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-100V; I
E
=0
-1
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-1
h
FE
DC current gain
I
C
=-10mA ; V
CE
=-5V
90
450
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
5
pF
f
T
Transition frequency
I
C
=10mA ; V
CB
=-10V
70
MHz
h
FE
Classifications
Q
90-155
R
130-220
S
185-330
T
260-450
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
