Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA913
I
C
=-0.1mA ,I
B
=0
2SA913A
I
E
=-10μA ,I
C
=0
I
C
=-0.5A; I
B
=-50mA
I
C
=-0.3A; I
B
=-30mA
I
C
=-0.5A; I
B
=-50mA
CONDITIONS
2SA913 2SA913A
MIN
-150
TYP.
MAX
UNIT
V
(BR)CEO
Base-emitter
breakdown voltage
V
-180
-5
-1.0
V
-1.5
V
V
(BR)EBO
Emitter-base breakdown voltage
2SA913
2SA913A
2SA913
2SA913A
V
CEsat
Collector-emitter
saturation voltage
V
BEsat
Base-emitter
saturation voltage
-1.5
I
C
=-0.3A; I
B
=-30mA
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-150mA ; V
CE
=-10V
I
C
=-500mA ; V
CE
=-5V
I
E
=0 ;V
CB
=-100V;f=1MHz
I
C
=50mA ; V
CE
=-10V
120
65
50
15
-1
-1
330
V
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
μA
μA
pF
MHz
h
FE-1
Classifications
P
65-110
Q
90-155
R
130-220
S
185-330
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
