JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA744
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA745
2SA745A
V
CEsat
Collector-emitter saturation voltage
2SA744
I
CBO
Collector
cut-off current
2SA745
2SA745A
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=-3A; I
B
=-0.3A
V
CB
=-80V; I
E
=0
V
CB
=-100V; I
E
=0
V
CB
=-120V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
I
C
=-50mA ;I
B
=0
CONDITIONS
2SA744/745/745A
MIN
-80
-100
-120
TYP.
MAX
UNIT
V
-1.5
V
-1.0
mA
-1.0
30
15
mA
MHz
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=-3A;R
L
=4Ω
I
B1
=-0.2A; I
B2
=0.1A
V
CC
=-12V
1.2
2.0
0.55
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
