JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA483
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-150
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-0.5mA ;I
E
=0
-150
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-0.5A; I
B
=-50mA
-1.8
V
V
BE
Base-emitter on voltage
I
C
=-0.5A ; V
CE
=-10V
-1.8
V
I
CBO
Collector cut-off current
V
CB
=-150V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-0.1A ; V
CE
=-10V
30
240
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1.0MHz
50
pF
f
T
Transition frequency
I
C
=-0.1A ; V
CE
=-10V
10
MHz
h
FE
Classifications
R
30-80
O
70-140
Y
120-240
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
