JMnic
Product Specification
Silicon PNP Power Transistors
2SA1887
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-10mA ; IB=0
-50
IC=-5A ;IB=-0.25A
IC=-5A ;IB=-0.25A
VCB=-70V; IE=0
-0.2
-0.4
-1.4
-1.0
-1.0
400
V
-0.95
V
μA
μA
IEBO
VEB=-7V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-1V
IE=0; VCB=-10V;f=1MHz
IC=-1A ; VCE=-1V
120
COB
Output capacitance
215
45
pF
fT
Transition frequency
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
