JMnic
Product Specification
Silicon PNP Power Transistors
2SA1695
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-50mA ;IB=0
-140
IC=-5A ;IB=-0.5A
-0.5
-10
-10
180
V
VCB=-140V; IE=0
VEB=-6V; IC=0
μA
μA
IEBO
hFE
DC current gain
IC=-3A ; VCE=-4V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.5A ; VCE=-12V
50
COB
Output capacitance
400
20
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.17
1.86
0.27
μs
μs
μs
IC=-5A;RL=12Ω
IB1=- IB2=-0.5A
ts
Storage time
Fall time
V
CC=-60V
tf
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
