JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1671
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-120
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=-1mA; I
C
=0
I
C
=-3 A;I
B
=-0.3 A
-6
V
Collector-emitter saturation voltage
-0.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-10
h
FE
DC current gain
I
C
=-3A ; V
CE
=-4V
50
180
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-12V
20
MHz
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2