JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA1659
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1659A
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
I
C
=-0.5A;I
B
=-50mA
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-160V;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.1A ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=10mA ; I
B
=0
CONDITIONS
2SA1659 2SA1659A
MIN
-160
TYP.
MAX
UNIT
V
-180
-1.5
-1.0
-1
-1
70
100
30
240
MHz
pF
V
V
μA
μA
h
FE
classifications
O
70-140
Y
120-240
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
