JMnic
Product Specification
Silicon PNP Power Transistors
2SA1328
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=-50mA ,IB=0
MIN
TYP.
MAX
UNIT
V
-50
IC=-6A; IB=-0.3A
IC=-6A; IB=-0.3A
VCB=-60V; IE=0
-0.15
-0.9
-0.4
-1.2
-10
V
V
μA
μA
IEBO
VEB=-6V; IC=0
-10
hFE-1
DC current gain
IC=-1A ; VCE=-1V
IC=-6A ; VCE=-1V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-5V
70
40
240
hFE-2
DC current gain
Cob
Output capacitance
320
70
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.3
1.0
0.5
μs
μs
μs
IB1=- IB2=-0.3A
RL=5Ω;VCC=-30V
Storage time
Fall time
tf
hFE-1 Classifications
O
Y
70-140
120-240
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
