JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1327
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA , I
B
=0
-20
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-8A; I
B
=-0.4A
-0.5
V
V
BE
Base-emitter on voltage
I
C
=-8A ; V
CE
=-2V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-50V;I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-8V; I
C
=0
-1.0
μA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-2V
100
320
h
FE -2
DC current gain
I
C
=-8A ; V
CE
=-2V
70
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V; f=1MHz
400
pF
f
T
Transition frequency
I
C
=-1A ; V
CE
=-2V
45
MHz
h
FE-1
Classifications
O
100-200
Y
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
