JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ,I
E
=0
I
C
=-1mA ,I
B
=0
I
E
=-1mA ,I
C
=0
I
C
=-7.5A; I
B
=-0.375A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
100
MIN
-80
-60
-5
TYP.
2SA1292
MAX
UNIT
V
V
V
-0.4
-100
-100
280
V
μA
μA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-6A I
B1
=- I
B2
=-0.3A
V
CC
=-20V;R
L
=3.3Ω
0.1
0.5
0.1
μs
μs
μs
h
FE
Classifications
Q
70-140
R
100-200
S
140-280
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
