JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1250
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-200
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ;I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=200V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-10
μA
h
FE-1
DC current gain
I
C
=-2A ; V
CE
=-1V
40
200
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-1V
20
2