JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-25mA ;I
B
=0
I
C
=-5A; I
B
=-0.12A
V
CB
=-70V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-5A ; V
CE
=-0.5V
I
E
=3A ; V
CE
=-12V
40
MIN
-50
2SA1205
TYP.
MAX
UNIT
V
-0.5
-0.1
-0.1
V
mA
mA
20
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;R
L
=4Ω
I
B1
=-I
B2
=-0.12A
V
CC
=-20V
0.60
0.50
0.25
μs
μs
μs
2