JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-25mA ;I
B
=0
I
C
=-5A; I
B
=-0.5A
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
E
=0 ; V
CB
=-80V;f=1MHz
I
E
=1A ; V
CE
=-12V
50
110
60
MIN
-150
TYP.
2SA1187
MAX
UNIT
V
-2.0
-0.1
-0.1
V
mA
mA
pF
MHz
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
2