JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-0.1A ;I
B
=0
I
C
=-7A; I
B
=-0.7A
I
C
=-7A ; V
CE
=-5V
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-5V
60
20
250
100
MIN
-50
TYP.
2SA1185
MAX
UNIT
V
-0.8
-1.5
-1
-2
320
V
V
mA
mA
pF
MHz
h
FE-1
Classifications
Q
60-120
P
100-200
O
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
