JMnic
Product Specification
Silicon PNP Power Transistors
2SA1129
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Large
current capacity
・Complement
to type 2SC2654
APPLICATIONS
・For
low-frequency power amplifiers
and mid-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
T
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.5
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-30
-30
-7
-7
-15
-3.5
40
W
UNIT
V
V
V
A
A
A