JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1108
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ; I
B
=0
-130
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-2.0
V
V
BE
Base-emitter on voltage
I
C
=-5A ; V
CE
=-5V
-2.0
V
μA
I
CBO
Collector cut-off current
V
CB
=-130V; I
E
=0
-5
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
μA
h
FE-1
DC current gain
I
C
=-2A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-5V
35
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V
60
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
