JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1105
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-120
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.8
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-100
μA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-100
μA
h
FE
DC current gain
I
C
=-3A ; V
CE
=4V
50
180
f
T
Transition frequency
I
E
=1A ; V
CE
=-12V
20
MHz
2