JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEV
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-0.2A ;I
B
=0
I
C
=-4A; I
B
=-0.4A
I
C
=-10A; I
B
=-3.3A
I
C
=-4A ; V
CE
=-4V
V
CE
=-60V; V
BE(off)
=0
V
CE
=Rated Value; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=-7V; I
C
=0
I
C
=-4A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
20
5
MIN
-160
2SA1074
TYP.
MAX
UNIT
V
-1.1
-3.0
-1.8
-0.1
-1.0
-6.0
-0.1
V
V
V
mA
mA
mA
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
