JMnic
Product Specification
Silicon PNP Power Transistors
2SA1072 2SA1073
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-120
-160
-120
-160
-7
TYP.
MAX
UNIT
2SA1072
2SA1073
2SA1072
2SA1073
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-1mA ;RBE=∞
V
Collector-base
breakdown voltage
V(BR)CBO
IC=-50μA ;IE=0
IE=-50μA ;IC=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
V
V
V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
-0.9
-1.8
-1.7
Base-emitter on voltage
IC=-5A ; VCE=-5V
VCB=-120V; IE=0
VCB=-160V; IE=0
-1.25
2SA1072
2SA1073
2SA1072
2SA1073
Collector
ICBO
-50
-1
μA
cut-off current
V
CE=-120V; RBE=∞
CE=-160V; RBE=∞
Collector
ICEO
mA
cut-off current
V
IEBO
hFE-1
hFE-2
COB
fT
Emitter cut-off current
DC current gain
VEB=-7V; IC=0
-50
μA
IC=-1A ; VCE=-5V
60
40
200
DC current gain
IC=-7A ; VCE=-5V
Output capacitance
Transition frequency
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-10V;f=10MHz
300
60
pF
MHz
Switching times
tr
tstg
tf
Rise time
0.15
0.50
0.11
μs
μs
μs
IC=-7.5A
IB1=-IB2=-0.75A;RL=4Ω
Storage time
Fall time
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
