JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA1072
I
C
=-1mA ;R
BE
=∞
2SA1073
2SA1072
I
C
=-50μA ;I
E
=0
2SA1073
V
(BR)EBO
V
CEsat
V
BE
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2SA1072
2SA1073
2SA1072
2SA1073
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
E
=-50μA ;I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ; V
CE
=-5V
V
CB
=-120V; I
E
=0
CONDITIONS
2SA1072 2SA1073
MIN
-120
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-160
-120
V
-160
-7
-0.9
-1.25
-1.8
-1.7
V
V
V
V
(BR)CBO
Collector-base
breakdown voltage
I
CBO
Collector
cut-off current
-50
V
CB
=-160V; I
E
=0
V
CE
=-120V; R
BE
=∞
-1
V
CE
=-160V; R
BE
=∞
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1A ; V
CE
=-10V;f=10MHz
60
40
300
60
-50
200
μA
I
CEO
Collector
cut-off current
mA
μA
pF
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=-7.5A
I
B1
=-I
B2
=-0.75A;R
L
=4Ω
0.15
0.50
0.11
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
