JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6546
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6547
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6546
I
CEV
Collector cut-off current
2N6547
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=10A; I
B
=2A
I
C
=15A; I
B
=3A
I
C
=10A ;I
B
=2A
V
CE
=650V; V
BE(off)
=1.5V
T
C
=100℃
V
CE
=850V ;V
BE(off)
=1.5V
T
C
=100℃
V
EB
=9V; I
C
=0
I
C
=5A ; V
CE
=2V
I
C
=10A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V;f=1MHz
I
C
=100mA ; I
B
=0
CONDITIONS
2N6546 2N6547
MIN
300
TYP.
MAX
UNIT
V
400
1.5
5.0
1.6
1.0
4.0
1.0
4.0
1.0
12
6
6
60
30
35
MHz
V
V
V
mA
mA
mA
Switching times
t
d
t
r
t
stg
t
f
Delay time
Rise time
Storage time
Fall time
0.05
1.0
4.0
0.8
μs
μs
μs
μs
I
C
=10A; I
B1
=-I
B2
=2.0A
V
CC
=250V; t
p
=0.1ms;
Duty Cycle≤2.0%
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
