JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6537
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.2A ; I
B
=0
120
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=3A ;I
B
=6mA
2.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=8A; I
B
=80mA
3.0
V
V
BE-1
Base -emitter on voltage
I
C
=3A ; V
CE
=3V
2.8
V
V
BE-2
Base -emitter on voltage
I
C
=8A ; V
CE
=3V
V
CE
=120V; V
BE
=-1.5V
T
C
=125℃
V
CE
=120V; I
B
=0
4.5
0.5
5.0
1.0
V
I
CEV
Collector cut-off current
mA
I
CEO
Collector cut-off current
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
5.0
mA
h
FE-1
DC current gain
I
C
=3A ; V
CE
=3V
1000
10000
h
FE-2
DC current gain
I
C
=8A ; V
CE
=3V
100
5000
V
F
Diode forward voltage
I
F
=5A
4.0
V
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
