Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
V
F
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=0.2A ; I
B
=0
I
C
=3A I
B
=6mA
I
C
=8A I
B
=0.08A
I
C
=3A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
V
CB
=100V I
E
=0
V
CE
=100V I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
I
F
=5A
500
100
MIN
100
TYP.
2N6535
MAX
UNIT
V
3.0
3.0
2.8
4.5
0.5
1.0
5.0
10000
5000
4.0
V
V
V
V
mA
mA
mA
V
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
