JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6486
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6487
2N6488
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N6486
I
CEX
Collector cut-off current
V
BE
=-1.5V
2N6487
2N6488
2N6486
I
CEO
Collector cut-off current
2N6487
2N6488
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
I
C
=5A;I
B
=0.5A
I
C
=15A;I
B
=5A
I
C
=5A ; V
CE
=4V
I
C
=15A ; V
CE
=4V
V
CE
=45V;
V
CE
=40V;T
C
=150℃
V
CE
=65V;
V
CE
=60V;T
C
=150℃
V
CE
=85V;
V
CE
=80V;T
C
=150℃
V
CE
=20V;I
B
=0
V
CE
=30V;I
B
=0
V
CE
=40V;I
B
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=15A ; V
CE
=4V
I
C
=0.2A ;I
B
=0
2N6486 2N6487 2N6488
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
1.3
3.5
1.3
3.5
0.5
5.0
0.5
5.0
0.5
5.0
V
V
V
V
mA
1.0
mA
1.0
20
5
150
mA
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
