JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6357
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdwon voltage
I
C
=0.2A ;I
B
=0
60
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=10A ;I
B
=40mA
2.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=20A ;I
B
=1A
4.0
V
V
BE sat
Base-emitter saturation voltage
I
C
=20A ;I
B
=1A
4.0
V
V
BE
Base-emitter on voltage
I
C
=10A ; V
CE
=4V
V
CE
=60V;I
B
=0
2.8
V
I
CEO
Collector cut-off current
1.0
mA
I
CBO
Collector cut-off current
V
CB
=80V; I
E
=0
0.5
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
5.0
mA
h
FE-1
DC current gain
I
C
=4A ; V
CE
=5V
500
5000
h
FE-2
DC current gain
I
C
=20A ; V
CE
=5V
100
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
