JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・High
DC current gain
APPLICATIONS
・Designed
for audio amplifier and
switching circuits applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6326 2N6327 2N6328
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6326
V
CBO
Collector-base voltage
2N6327
2N6328
2N6326
V
CEO
Collector-emitter voltage
2N6327
2N6328
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
60
80
100
5
30
7.5
200
200
-65~200
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W