JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6326 2N6327 2N6328
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6326
Collector-emitter
sustaining voltage
60
V
CEO(SUS)
2N6327
I
C
=0.2 A ;I
B
=0
80
V
2N6328
100
V
CEsat
Collector-emitter saturation voltage
I
C
=15A; I
B
=1.5A
1.2
V
V
BEsat
Base-emitter saturation voltage
I
C
=15A; I
B
=1.5A
1.5
V
V
BE
Base-emitter on voltage
I
C
=8A ; V
CE
=4V
V
CB
=60V; I
E
=0
T
C
=150℃
V
CB
=80V; I
E
=0
T
C
=150℃
V
CB
=100V; I
E
=0
T
C
=150℃
V
EB
=4V; I
C
=0
1.5
1.0
5.0
1.0
5.0
1.0
5.0
1.0
V
2N6326
I
CBO
Collector cut-off current
2N6327
mA
2N6328
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=8A ; V
CE
=4V
25
h
FE-2
DC current gain
I
C
=30A ; V
CE
=4V
6
30
f
T
Transition frequency
I
C
=1A ; V
CE
=10V;f=1.0MHz
3
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
