Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
sustaining voltage
2N6298
I
C
=0.1A ; I
B
=0
2N6299
I
C
=4A; I
B
=16mA
I
C
=8A; I
B
=80mA
I
C
=8A; I
B
=80mA
I
C
=4A ; V
CE
=3V
2N6298
I
CEX
Collector cut-off current
2N6299
2N6298
I
CEO
Collector cut-off current
2N6299
I
EBO
h
FE-1
h
FE-2
C
OB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
V
CE
=40V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=4A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
I
E
=0 ; V
CB
=10V;f=0.1MHz
V
CE
=60V; V
BE(off)
=1.5V
T
C
=150℃
V
CE
=80V; V
BE(off)
=1.5V
T
C
=150℃
V
CE
=30V; I
B
=0
CONDITIONS
2N6298 2N6299
MIN
60
TYP.
MAX
UNIT
V
CEO(SUS)
V
80
2.0
3.0
4.0
2.8
0.5
5.0
0.5
5.0
0.5
V
V
V
V
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter on voltage
mA
mA
2.0
750
100
300
18000
mA
pF
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
