Product Specification
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Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6249
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6250
2N6251
2N6249
V
CE(sat)
Collector-emitter
saturation voltage
2N6250
2N6251
2N6249
V
BE(sat)
Base-emitter
voltage
saturation
2N6250
2N6251
I
CEV
Collector cut-off current
2N6249
I
CEO
Collector cut-off current
2N6250
2N6251
I
EBO
Emitter cut-off current
2N6249
h
FE
DC current gain
2N6250
2N6251
f
T
I
s/b
Transition frequency
Second breakdown collector current
With base forward biased
I
C
=1A ; V
CE
=10V
V
CE
=30V,t=1.0s,
Nonrepetitive
I
C
=10A ; V
CE
=3V
I
C
=10A;I
B
=1.0A
I
C
=10A;I
B
=1.25 A
I
C
=10A;I
B
=1.67 A
I
C
=10A;I
B
=1.0A
I
C
=10A;I
B
=1.25 A
I
C
=10A;I
B
=1.67 A
I
C
=200mA ; I
B
=0
2N6249 2N6250 2N6251
CONDITIONS
MIN
TYP.
MAX
200
275
350
UNIT
V
1.5
V
2.25
V
V
CE
=RatedV
CEV
;V
BE
=-1.5V
T
C
=125℃
V
CE
=150V;I
B
=0
V
CE
=225V;I
B
=0
V
CE
=300V;I
B
=0
V
EB
=6V; I
C
=0
10
8
6
2.5
5.8
5.0
10
mA
5.0
mA
1.0
50
50
50
mA
MHz
A
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
For 2N6249
I
C
=10A; I
B1
=-I
B2
=1.0A;V
CC
=200V
For 2N6250
I
C
=10A;I
B1
=-I
B2
=1.25A;V
CC
=200V
For 2N6251
I
C
=10A;I
B1
=-I
B2
=1.67A;V
CC
=200V
2.0
3.5
1.0
μs
μs
μs
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
