Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6098
2N6099
V
CEO(SUS)
Collector-emitter
sustioning voltage
2N6100
2N6101
V
CEsat-1
V
CEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
2N6098/6099
V
BE
Base-emitter on voltage
2N6100/6101
I
CBO
I
EBO
Collector cut-off current
Emitter cut-off current
2N6098/6099
h
FE
DC current gain
2N6100/6101
f
T
Transition frequency
2N6098 2N6099 2N6100 2N6101
CONDITIONS
MIN
70
70
TYP.
MAX
UNIT
I
C
=0.1A ;I
B
=0
80
80
I
C
=5A;I
B
=0.5A
I
C
=10A;I
B
=2.5A
I
C
=4A ; V
CE
=4V
1.3
I
C
=5A ; V
CE
=4V
V
CB
=Rated V
CBO
;I
E
=0
T
C
=150℃
V
EB
=8V; I
C
=0
I
C
=4A ; V
CE
=4V
20
I
C
=5A ; V
CE
=4V
I
C
=1A ; V
CE
=10V
0.8
80
0.5
2.0
1.0
1.3
3.5
V
V
V
V
mA
mA
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
