Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6077 2N6078 2N6079
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6077
Collector-emitter
sustaining voltage
275
V
CEO(sus)
2N6078
I
C
=0.1A ;I
B
=0
250
V
2N6079
350
V
CEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.5A
1.0
V
V
BEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.5A
1.2
V
I
CEO
Collector cut-off current
V
CE
= Rated V
CEO
; I
B
=0
V
CE
=Rated V
CEO
; V
BE(off)
=1.5V
T
C
=125℃
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=6V; I
C
=0
2.0
0.1
1.0
0.1
mA
I
CEX
Collector cut-off current
mA
I
CBO
I
EBO
Collector cut-off current
mA
Emitter cut-off current
1.0
mA
h
FE
DC current gain
I
C
=1.2A ; V
CE
=1V
12
70
f
T
Transition frequency
I
C
=0.5A;V
CE
=10V;f=1MHz
7
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
