Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector-emitter saturation voltage
・Complement
to type 2N5879 2N5880
APPLICATIONS
・For
general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5881 2N5882
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5881
V
CBO
Collector-base voltage
2N5882
Collector-emitter
voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
2N5881
Open base
2N5882
Open collector
80
5
15
30
5
160
150
-65~200
V
A
A
A
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.1
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
