Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5838
V
CEO
Collector-emitter
sustaining voltage
2N5839
2N5840
V
CEsat
V
BEsat
I
CBO
I
CEV
I
EBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5838
h
FE
DC current gain
2N5839/5840
f
T
Transition frequency
I
C
=2A ; V
CE
=3V
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=Rated V
CBO
; I
E
=0
I
C
=0.1A ;I
B
=0
2N5838 2N5839 2N5840
CONDITIONS
MIN
250
275
350
TYP.
MAX
UNIT
V
0.8
1.5
1.0
1.0
1.0
8
10
5
40
50
V
V
mA
mA
mA
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
C
=1A ; V
CE
=10V;f=1.0MHz
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
