Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
sustaining voltage
2N5743
I
C
=0.2A ;I
B
=0
2N5744
I
C
=10A; I
B
=1A
I
C
=20A ;I
B
=4A
I
C
=10A; I
B
=1A
I
C
=10A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=10A ; V
CE
=5V
I
C
=20A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
CONDITIONS
2N5743 2N5744
MIN
60
TYP.
MAX
UNIT
V
CEO
V
100
1.0
3.0
1.8
1.5
0.1
0.5
5.0
1.0
20
10
10
MHz
80
V
V
V
V
mA
mA
mA
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
