Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5193
V
CEO
Collector-emitter
sustaining voltage
2N5194
2N5195
V
CEsat-1
V
CEsat-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Emitter-base on voltage
2N5193
I
CEO
Collector cut-off current
2N5194
2N5195
2N5193
I
CBO
Collector cut-off current
2N5194
2N5195
2N5193
I
CEX
Collector cut-off current
2N5194
2N5195
I
EBO
Emitter cut-off current
2N5193
I
C
=-1.5A ;I
B
=-0.15A
I
C
=-4A ;I
B
=-1A
I
C
=-1.5A ; V
CE
=-2V
V
CE
=-40V; I
B
=0
V
CE
=-60V; I
B
=0
V
CE
=-80V; I
B
=0
V
CB
=-40V; I
E
=0
V
CB
=-60V; I
E
=0
V
CB
=-80V; I
E
=0
I
C
=-0.1A; I
B
=0
2N5193 2N5194 2N5195
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
V
-0.6
-1.2
-1.2
V
V
V
-1.0
mA
-0.1
mA
V
CE
=-40V; V
BE(off)
=-1.5V
T
C
=125℃
V
CE
=-60V; V
BE(off)
=-1.5V
T
C
=125℃
V
CE
=-80V; V
BE(off)
=-1.5V
T
C
=125℃
V
EB
=-5V; I
C
=0
-0.1
-2.0
-0.1
-2.0
-0.1
-2.0
-1.0
mA
mA
25
h
FE-1
DC current gain
2N5194
2N5195
2N5193
10
h
FE-2
DC current gain
2N5194
2N5195
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V;f=1MHz
I
C
=-4A ; V
CE
=-2V
7
2
I
C
=-1.5A ; V
CE
=-2V
20
100
80
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
