Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5050
V
CEO(sus)
Collector-emitter
sustaining voltage
2N5051
2N5052
V
CEsat
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N4910
I
CEO
Collector cut-off current
2N4911
2N4912
I
CBO
I
EBO
h
FE
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
I
C
=2A; I
B
=0.5A
I
C
=2A; I
B
=0.5A
I
C
=750mA ; V
CE
=5V
V
CE
=125V; I
B
=0
V
CE
=150V; I
B
=0
V
CE
=200V; I
B
=0
I
C
=0.1A ;I
B
=0
2N5050 2N5051 2N5052
CONDITIONS
MIN
125
150
200
TYP.
MAX
UNIT
V
1.2
1.5
1.2
V
V
V
5.0
mA
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=7V; I
C
=0
I
C
=750mA ; V
CE
=5V
I
C
=500mA;V
CE
=10V;f=1MHz
25
10
0.1
1.0
100
mA
mA
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
