Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
current
APPLICATIONS
・They
are especially intended for high current
and fast switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5038/2N5039
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5038
Collector-base voltage
2N5039
2N5038
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N5039
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
75
7
20
30
5
140
200
-65~200
V
A
A
A
W
℃
℃
Open emitter
120
90
V
CONDITIONS
VALUE
150
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.25
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
