Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Excellent
safe operating area
・2N4900
complement to type 2N4912
APPLICATIONS
・Designed
for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N4898 2N4899 2N4900
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N4898
V
CBO
Collector-base voltage
2N4899
2N4900
2N4898
V
CEO
Collector-emitter voltage
2N4899
2N4900
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
1.0
4.0
1.0
25
150
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
7.0
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
